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  MT6L58AS 2001-12-07 1 toshiba transistor silicon npn epitaxial planar type MT6L58AS vhf-uhf band low noise amplifier application vhf-uhf band oscillator application  two devices are built into the ses6 package, which is smaller and thinner than the super-thin and ultra-super mini (6-pin) es6 package. mounted devices q1: ssm (tesm) q2: ssm (tesm) three pin (ssm/tesm) type part no. mt3s06s (mt3s06t) mt3s03as (mt3s03at) maximum ratings (ta = 25c) characteristics symbol q1 q2 unit collector-base voltage v cbo 10 10 v collector-emitter voltage v ceo 5 5 v emitter-base voltage v ebo 1.5 2 v collector current i c 15 40 ma base current i b 7 10 ma collector power dissipation p c (note 1) 150 mw junction temperature t j 125 c storage temperature range t stg ? 55~125 c note 1: total power dissipation of q1 and q2 mounted on the circuit board. marking pin assignment unit: mm jedec D jeita D toshiba 2-2q1a weight: 2.1 mg b1 b2 c1 e1 c2 q1 q2 e2 a x 4 6 3 1 2 5 type name preliminar y
MT6L58AS 2001-12-07 2 electrical characteristics q1-side (ta     25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb  5 v, i e  0   0.1  a emitter cut-off current i ebo v eb  1 v, i c  0   1  a dc current gain h fe v ce  1 v, i c  5 ma 70  140  transition frequency f t v ce  3 v, i c  5 ma 7 10  ghz  s 21e  2 (1) v ce  1 v, i c  5 ma, f  2 ghz  7.5  insertion gain  s 21e  2 (2) v ce  3 v, i c  7 ma, f  2 ghz 4.5 8.3  db  nf (1) v ce  1 v, i c  3 ma, f  2 ghz  1.7 3 noise figure nf (2) v ce  3 v, i c  3 ma, f  2 ghz  1.6 3 db reverse transfer capacitance c re v cb  1 v, i e  0, f  1 mhz (note 2)  0.35 0.75 pf electrical characteristics q2-side (ta     25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb  5 v, i e  0   0.1  a emitter cut-off current i ebo v eb  1 v, i c  0   1  a dc current gain h fe v ce  1 v, i c  5 ma 80  160  f t (1) v ce  1 v, i c  5 ma 5 7  transition frequency f t (2) v ce  3 v, i c  10 ma 7 10  ghz  s 21e  2 (1) v ce  1 v, i c  5 ma, f  2 ghz  5  insertion gain  s 21e  2 (2) v ce  3 v, i c  20 ma, f  20 ghz 3 6.8  db  nf (1) v ce  1 v, i c  5 ma, f  2 ghz  1.7 3 noise figure nf (2) v ce  3 v, i c  7 ma, f  2 ghz  1.4 2.2 db reverse transfer capacitance c re v cb  1 v, i e  0, f  1 mhz (note 2)  0.8 1.15 pf note 2: c re is measured by 3 terminal method with capacitance bridge. handling precaution when handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
MT6L58AS 2001-12-07 3  toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc..  the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk.  the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others.  the information contained herein is subject to change without notice. 000707ea a restrictions on product use


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